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1. Laboratory:  AMOLF
FOM Institute for Atomic and Molecular Physics [AMOLF]
P.O.Box 41883
1009 DB Amsterdam
The Netherlands

2. Contact point:

Name: Laurens Kuipers

Position: Head of Center for Nanophotonics

Email: l.kuipers"you know what"

Tel.: +31207547100

3. Access rules:

 Facilities availability for external users:

Yes, in principle; not all instruments have the same facility of use. Depending on the particular instrument a choice for a collaborative effort or a more simple access can be decided upon.

Expenses reimbursement type:

Different modes of operation are available ranging from collaborative efforts (that are by their nature free) to full cost models.

Rules on cooperation:

No standard contracts are availble. IP agreements will be tailor-made.


 4. Equipment


3E1.- Woollam Vase ellipsometer, Spectroscopic ellipsometer, 300-1700 nm


3S1.- Princeton Instruments Acton SpectraPro 2300i,  spectrometers, with PIXIS Si CCD and OMA V LN-cooled InGaAs array detectors, 400-1600 nm

3S2.- Roper Scientific PIXIS100B, Spectroscopy system, 400-1100 nm, QE ~ 90%


3M1.- Scanning near field microscope, Phase- and polarization-sensitive, operating at visible, near infrared and telecom frequencies

3M2.- WiTec AlphaSNOM, SNOM/AFM/confocal microscope, piezo-scanned sample stage

3M3.- Nikon C1 inverted confocal microscope, confocal/TIRF microscope

3M4. - Scanning near-field manipulation microscope, Shear-force (non-contact), Tapered fiber probe, Allows to pick up nanoparticles (<50 nm), spatial resolution 100x100x5 nm. Sample scanning and tip scanning

3M5. - Fourier scattering microscope, Dark-field microscopy, Extinction microscopy, Fourier imaging

3M6. - Single molecule fluorescence microscope, Sample scanning confocal, Single photon correlations using time-correlated single photon counting, Single molecule fluorescence spectra, Single molecule CCD imaging

3M7.- Veeco Dimension 3100,  Atomic force microscope, 90x90x6 um scanner, 200 mm sample stage, AFM, STM

3M8.- FEI XL30, Scanning electron microscope, TFE SEM. EDAX EDS+EBSD, Gatan MonoCL, Kleindiek nanomanipulators

3M9.- FEI Helios, Focused ion beam/SEM, TFE SEM + Ga LMIS FIB, Raith Elphy pattern generator. Gas injectors for deposition of: Au, C, Pt, SiO2.

Radiation sources      

3R1.- Spectra Physics: Femtosecond laser system , Tsunami oscillator, 700-1080nm, >3W, 80MHz
3R2. - Opal OPO, 500mW, 1.3 and 1.5 micrometers

3R3.- Coherent:  Amplified femtosecond laser system, Micra oscillator, 15fs, 780-820nm, >300mW, 80MHz, RegA amplifier, 100fs, 250kHz, OPA 9800, 1200-2400nm, 40mW

3R4.- Agilent HP 8168F, Continuous wave tunable laser, 1450-1590nm, up to 9mW power

3R5.- Fianium sc450, Supercontinuum white light source, 450-2400nm, 2W

3R6.- Coherent Innova 90 Ar laser, CW Ar laser (2x)

3R7.- Lynx, Time-bandwidth Lynx, 10 MHz rep rate,  <8 ps pulses,  532 and 1064 nm ,  0.5 W green



3O1. -Becker Hickl DPC230, 16-channel time correlator (170 ps resolution)


6. Expertise


Thin-film analysis


Photoluminescence and Raman spectroscopy

Confocal and SNOM


Table: Expertise by material type and sample geometry combinations:

Materials types
Complex shape object Bulk samples or bars
Substrate layer(s) on substrate



Thin films

Isotropic materials
Optical, R, T, P, A Optical, R, T, P, A     Optical, R, T, P, A, E  Optical, R, T, P, A Optical, R, T, P, A, E
Photonic crystals Optical, R, T, P, A Optical, R, T, P, A     Optical, R, T, P, A, E  Optical, R, T, P, A Optical, R, T, P, A, E
Mesoscopic samples              
Bianisotropic  Optical, R, T, P, A  Optical, R, T, P, A      Optical, R, T, P, A, E   Optical, R, T, P, A  Optical, R, T, P, A, E
inversion symmetrical
 Optical, R, T, P, A  Optical, R, T, P, A      Optical, R, T, P, A, E   Optical, R, T, P, A  Optical, R, T, P, A, E
Active materials              
Controllable materials              
Diffraction gratings              
Scattering media              

Notation used here:

Frequency range: MHz, GHz, THz or optical
R - reflection coefficient amplitude or intensity;
T - transmission coefficient  or intensity,
P - phase information;
A - reflection and transmission on many angles of incidence;
E - ellipsometry data;
D - ray velocity direction or distortion (do not mix, please, with isotropic refraction index characterization);
S - internal structure investigation with microscopy (nanoscopy);
Ch - chemical properties investigation (metal or dielectric etc.);
Chi(2)/Chi(3) of the material