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1. Laboratory:
Institut fur Photonik und Quantenelektronik
Universitat Karlsruhe (TH)
Geb. 30.10
Engesserstr. 5
D-76131 Karlsruhe
http://www.ihq.uni-karlsruhe.de/staff/Mitarbeiter/moch/index_de.php
2. Contact point:
Name: Martin Moch, Oswald Speck
Position: Scientific Staff, Technical Staff
Email: moch "you know what" kit.edu
Tel.: +49-721 608 2487
Fax.: +49-721 608 2786
3. Access rules:
Facilities availability for external users:
Yes, in principle;
Expenses reimbursement type:
Has to be decided individually
Rules on cooperation:
No special rules.
4. Equipment
Spectrometers
S1. - Oscilloscope 70GHz sampling with Photodiodes
S2. - Electrical Spectrum Analyser, 50GHz
S3. - OSA, 187-250THz
Microscopes
M1. - Optical, Leica MZ 125 Radiation sources
M2. - Mode-locked laser
M3. - Tuneable laser, 1.48-1.58um
Other
O1- Pump Probe Setup, 187-250THz
O2. - Gain/noise measurement, 187-250THz
6. Expertise
Interferometry:
Free space interferometer with tuneable delay.
Spectrometry:
Transmission and Phase measurements in the C-Band for all different kinds of materials are possible if light can be coupled from fibre to device. We are using SOI chips as devices and deposit the materials we would like to characterise on top.
Nonlinearity of the deposited materials are obtained with Four-Wave-mixing or applying voltage for chi(2).
Pump-Probe Setup available.
Table: Expertise by material type and sample geometry combinations:
Materials types
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Slabs
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Complex shape object |
Bulk samples or bars
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Substrate |
layer(s) on substrate
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Sub-wave
length
samples
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Other |
Isotropic materials
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THz, T, P |
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| Photonic crystals |
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THz, T, P |
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Quasicrystals
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THz, T, P |
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| Mesoscopic samples |
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| Bianisotropic |
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Anisotropic
inversion symmetrical |
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| Active materials |
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| Controllable materials |
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THz, T, P |
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| Diffraction gratings |
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| Scattering media |
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| Chi(2) and Chi(3) materials |
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THz, T, P |
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Notation used here:
Frequency range: MHz, GHz, THz or optical
R - reflection coefficient amplitude or intensity;
T - transmission coefficient or intensity,
P - phase information;
A - reflection and transmission on many angles of incidence;
E - ellipsometry data;
D - ray velocity direction or distortion (do not mix, please, with isotropic refraction index characterization);
S - internal structure investigation with microscopy (nanoscopy);
Ch - chemical properties investigation (metal or dielectric etc.);
Chi(2)/Chi(3) of the material
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