USPI Print

1. Laboratory:  USPI

Universitaet Stuttgart
4. Physikalisches Institut
Pfaffenwaldring 57
70550 Stuttgart
Germany

http://www.pi4.uni-stuttgart.de/


2. Contact point:

Name: Harald Giessen / Heinz Schweizer

Position: Prof.

Email:h.giessen"you know what"physik.uni-stuttgart.de

Tel.: 0049 711 685 65111

Fax.: 0049 711 685 65097

 

3. Access rules:

Facilities availability for external users:

Yes, in principle;

 Expenses reimbursement type:

Commercial use for any external customer;

 Rules on cooperation:

No special rules

 

 4. Equipment

Elipsometers:

7E1. - Standard ellipsometers

 

Spectrometers:

7S1. -  Divers standard optical monochromators (Mono- and Double ) for R, T,PL, absorption  

7S2. - PLE,Raman,time resolved, 2 µm - UV

7S3.- FTIR (Bruker Vertex 80),  1000 1/cm – 25000 1/cm

             
Microscopes

7M1. - AFM (Veeco CP2), down to atomic resolution
7M2. - SEM (Hitachi S4800), down to 1 nm
7M3. - SEM (Hitachi S800)   
 

Radiation sources      

7R1.- Home made fs laser (P< 5W, t < 300 fs Dn =40 MHz, l=1030 nm

7R2.- HP 8510 network analyzer, (.05-40 GHz)
7R3. - Divers gas laser systems, (Ar, Kr)    Visible, UV
7R4. - Ti-Sapphire laser, 700 – 1100 nm, 2ps / 200 fs
7R5.- Excimer laser, 308 nm
7R6. - Nd:YAG-laser, 1064 nm, 532 nm
7R7. - Dye-laser, 550 nm – 700 nm
7R8. - White light laser (fiber laser),  450 nm – 1600 nm, 200mW

 

6. Expertise

Ellipsometry

Characterization of thin s.c. films, metamaterial films (assignment of improved refraction index data for thin metallic films)


Spectrometry

- FTIR (Bruker Vertex 80) metamaterial characterization; Standard optical monochromators for R,T,PLE,Raman,time resolved spectroscopy (IR-UV), metamaterial characterization quantum dot characterization; angle resolved spectroscopy (IR-UV), metamaterial characterization

Microscopy


- SEM (Hitachi S4800), metamaterial characterization and general nanostructure characterization; AFM (Veeco CP2), metamaterial characterization and general nanostructure characterization; opt microscope Hyperion; Standard optical microscopy;

 Fabrication

- HFETs and devices for low dimensional transport (2DEG GaAs/AlGaAs) , VCSEL (650 nm – 670 nm), high power DFB lasers (GaInP/AlGaInP, 1W @670 nm), Dynamic single mode lasers (20 GHz, 1550 nm) 

- High resolution e-beam lithography Jeol 5DII U (down to 10 nm, depending on resist system used); optical holography for metamaterial production; Standard optical lithography;
Dry etching (RIBE (technics Plasma), ECR-RIE (Leybold and Oxford PlasmaLab90)), RTA (rapid thermal annealing), Deposition techniques (PECVD, thermal evaporation deposition (Varian), e-gun-deposition (Leybold PLS500), sputter deposition (Varian)

 

Table: Expertise by material type and sample geometry combinations:

Materials types
 Slabs
 Complex shape object Bulk samples or bars
 Substrate layer(s) on substrate

Sub-wave
length
samples

 

Thin films
Isotropic materials

Optical,
R,T,A,S,E

GHz,R,T

 Optical,
R,T,A,S,E

Optical,
R,T,A,S,E

GHz,R,T

 Optical,
R,T,A,S,E

GHz,R,T

Optical,
R,T,A,S,E


   Optical,
R,T,A,S,E		 GHz,R,T
Photonic crystals Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		 Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		 Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  
Quasicrystals
 Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E
 Optical,
R,T,A,S,E		   Optical,
R,T,A,S,E		  
Mesoscopic samples  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		    Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  
Bianisotropic  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		    Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  
Anisotropic
inversion symmetrical		              
Active materials              
Controllable materials          Optical,
R,T,A,S,E		    
Diffraction gratings Optical,
R,T,A,S,E		    Optical,
R,T,A,S,E		        
Scattering media              
Stacked resonator structures with frequency selective mirrors
isotropic

        
  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E		  Optical,
R,T,A,S,E

Notation used here:

Frequency range: MHz, GHz, THz or optical
R - reflection coefficient amplitude or intensity;
T - transmission coefficient  or intensity,
P - phase information;
A - reflection and transmission on many angles of incidence;
E - ellipsometry data;
D - ray velocity direction or distortion (do not mix, please, with isotropic refraction index characterization);
S - internal structure investigation with microscopy (nanoscopy);
Ch - chemical properties investigation (metal or dielectric etc.);
Chi(2)/Chi(3) of the material