Position: Full Professor, Material Science, Center for Surface and Nano-analytics.
Email: kurt.hingerl@jku.at
Tel.: +43 732 2468 9662
Fax.: +43 732 2468 9696
3. Access rules:
Facilities availability for external users:
We are looking for external interested parties and will be happy to cooperate, if measurements are done by the external interested parties (in case of ellipsomeetry and Raman)
Expenses reimbursement type:
1)Either scientific co-operation
2)or clear charging of hours (according to ZONA Benutzerordnung)
Rules on cooperation:
www.zona.jku.at
4. Equipment
Elipsometers
12E1. - UV-VIS Ellipsometer, 193 nm- 1.7µm, (0.7- 6.5 eV), Variable angle of incidence
Focusing probes Can measure transmission ellipsometry as well as reflection ellipsometry
12E2. IR Ellipsometer, 33µm- 1.7µm, 38 meV- 0.7 eV, 300- 6000 cm-1 Can measure transmission ellipsometry as well as reflection ellipsometry
Spectrometers:
12S1.
- Confocal Raman Spectrometer for Graphene
, Cooled Si detector Cooled InGas detector
For Raman as well as PL or fluorescence (down to 1.7 µm) 3 excitation lasers:
532 nm, 632 nm and 785 nm
12M1. - Focused ion beam REM, Similar system as in the link, with EBSD, 2 electron detectors, EDX, etc. Other details on request.
6. Expertise
Ellipsometry
Yes.
Extremely high expertise; also for anisotropic samples, etc.
Also for normal incidence: Reflection anisotropy spectroscopy
Also for simulations of structured samples, etc-.
Spectrometry
Yes.
Raman spectroscopy
Microscopy
Yes
for electron microscopy
Table: Expertise by material type and sample geometry combinations:
Materials types
Slabs
Complex shape object
Bulk samples or bars
Substrate
layer(s) on substrate
Sub-wave
length
samples
Thin films
Isotropic materials
Photonic crystals
Quasicrystals
Mesoscopic samples
Bianisotropic
Anisotropic
inversion symmetrical
Active materials
Controllable materials
Diffraction gratings
Scattering media
Other
Notation used here:
Frequency range: MHz, GHz, THz or optical R - reflection coefficient amplitude or intensity; T - transmission coefficient or intensity, P - phase information; A - reflection and transmission on many angles of incidence; E - ellipsometry data; D - ray velocity direction or distortion (do not mix, please, with isotropic refraction index characterization); S - internal structure investigation with microscopy (nanoscopy); Ch - chemical properties investigation (metal or dielectric etc.); Chi(2)/Chi(3) of the material